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Datasheet RU40230R Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | RU40230R | N-Channel Advanced Power MOSFET RU40230R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 40V/230A, RDS (ON) =2.3mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
TO-220
Applications
• DC-DC Con |  Ruichips | mosfet |
RU4 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | RU4 | Silicon And Fast Recovery Rectifiers RoHS
Silicon And Fast Recovery Rectifiers
TYPE
Maximum Maximum Peak Forward
Recurrent Average Surge Current
Peak Forward
Half
Reverse Rectified sine-wave
Voltage Current Superimposed
Maximum Forward Voltage
Maximum
DC
Reverse
Current TA=25 OC
Typical Reverse Recovery
Time
Package Style
T  WEJ rectifier | | |
| 2 | RU4 | Fast-Recovery Rectifier Diodes
Fast-Recovery Rectifier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A)
( ) is with Heatsink
Electrical Characteristics (Ta = 25°C) Tstg (°C) VF (V) max IF (A) IR IR (H) (µA) (µA) VR = VRM VR = VRM max Ta =100°C max
Others
IFSM (A)
50Hz Half-cycle  Sanken electric rectifier | | |
| 3 | RU4 | HIGH EFFICIENCY ECTIFIERS BL
FEATURES
Low cost
GALAXY ELECTRICAL
RU4Y(Z) --- RU4YX(Z)
VOLTAGE RANGE: 100 --- 1000 V CURRENT: 2.5 -- 4.0 A
HIGH EFFICIENCY ECTIFIERS
DO - 27
Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Alcohol,Isopropanol and similar solvents www.DataS  Galaxy Semi-Conductor data | | |
| 4 | RU40120M | N-Channel Advanced Power MOSFET RU40120M
N-Channel Advanced Power MOSFET
Features
• 40V/120A,
RDS (ON) =2.7mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design • Ultra Low On-Resistance • Fast Switching Speed • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant)
Applications
• DC/DC Converters Ruichips mosfet | | |
| 5 | RU40120R | N-Channel Advanced Power MOSFET RU40120R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 40V/120A, RDS (ON) =3.5mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
TO-220
Applications
• DC-DC Con Ruichips mosfet | | |
| 6 | RU40120S | N-Channel Advanced Power MOSFET RU40120S
N-Channel Advanced Power MOSFET
Features
• 40V/120A,
RDS (ON) =3.5mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design • Ultra Low On-Resistance • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
D
Applications
• DC-DC Converters
G S Ruichips mosfet | | |
| 7 | RU40130R | N-Channel Advanced Power MOSFET RU40130R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 40V/135A, RDS (ON) =3.2mΩ (Typ.)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
TO-220
Applications
• Switchin Ruichips mosfet | |
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