| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | RU3582S | N-Channel Advanced Power MOSFET RU3582S N-Channel Advanced Power MOSFET MOSFET Features • 40V/100A, RDS (ON) =5mΩ (Typ.) @ VGS=10V • Ultra Low On-Resistance • Fast Switching • 100% avalanche tested • 175°C Operating Temperature • Lead Free,RoHS compliant Pin Description TO-263 Applications • Switching Application Systems • UPS N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter |
 Ruichips |
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Recommended search results related to RU3582S |
| Part No | Description ( Function) | Manufacturers | |
| RU3582R | N-Channel Advanced Power MOSFET Features • 40V/100A, RDS (ON) =5mΩ (Typ.) @ VGS=10V • Ultra Low On-Resistance • Fast Switching • 100% avalanche tested • 175°C Operating Temperature • Lead Free,RoHS compliant RU3582R N-Channel Advanced Power MOSFET MOSFET Pin Description TO-220 Applications • |
Ruichips |
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| 2SC3582 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3582 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3582 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Lownoise figure, |
 NEC |
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| 2SC3582 | Silicon NPN RF Transistor INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC3582 DESCRIPTION ·Low Noise Figure, High Gain, and High Current Capability Achieve a Very Wide Dynamic Range and Excellent Linearity. ·Low Noise and High Gain NF = 1.2 dB TYP. @f = 1.0 GHz Ga |
 Inchange Semiconductor |
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| 2SK3582TK | Field Effect Transistor Silicon N Channel Junction Type 2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TK For ECM • Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.8±0.05 0.32±0.05 3 2 0.1±0.05 Unit: mm 0.45 0.45 1.4±0.05 Characteristic Gate-Drain voltage Gate Current Drain power d |
 Toshiba Semiconductor |
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| 2SK3582TV | Silicon N Channel Junction Type 2SK3582TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TV For ECM • Application for Ultra-compact ECM 0.2±0.05 1.2±0.05 0.3±0.05 3 0.8±0.05 Unit: mm 1.2±0.05 0.8±0.1 Absolute Maximum Ratings (Ta=25°C) Characteristic Gate-Drain voltage Gate |
Toshiba Semiconductor |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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