RU1H190R データシート PDFこの部品の機能は「N-channel Advanced Power Mosfet」です。 |
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部品番号 |
RU1H190R N-Channel Advanced Power MOSFET RU1H190R N-Channel Advanced Power MOSFET MOSFET Features • 100V/190A, RDS (ON) =5mΩ (Type) @ VGS=10V,IDS=80A • Ultra Low On-Resistance • Exceptional dv/dt capability • Fast Switching and Fu Ruichips |
文字列「 RU1H190 」「 1H190R 」で始まる検索結果です。 |
部品説明 |
RU1H190S N-Channel Advanced Power MOSFET RU1H190S N-Channel Advanced Power MOSFET MOSFET Features • 100V/190A, RDS (ON) =5mΩ (Type) @ VGS=10V,IDS=80A • Ultra Low On-Resistance • Exceptional dv/dt capability • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature Ruichips |
1N1190 STANDARD RECOVERY RECTIFIERS 1N1183-1N1190, 1N3765-1N3768 High-reliability discrete products and engineering services since 1977 STANDARD RECOVERY RECTIFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Availabl Digitron Semiconductors |
1N1190 High Reliability Silicon Power Rectifier 1N1184, 1N1186, 1N1188, 1N1190, 1N3766 and 1N3768 (R) Available on commercial versions High Reliability Silicon Power Rectifier Qualified per MIL-PRF-19500/297 DESCRIPTION This series of silicon power rectifier part numbers are qualified up to the JANTXV level for high reliabi Microsemi Corporation |
1N1190 Silicon-Power Rectifiers 1N 1183 ... 1N 1190, 1N 3766, 1N 3768 PBY 301 ... PBY 307 Silicon-Power Rectifiers Silizium-Leistungs-Gleichrichter 13 14 Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Metal case – Metallgehäuse 37 35 A 50…1000 V DO-5 6g Diotec Semiconductor |
1N1190 35/40/and 60 Amp Power Silicon Rectifier Diodes International Rectifier |
1N1190 (1N1188 - 1N1190R) Silicon Standard Recovery Diode Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ America Semiconductor |
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