Datasheet RT3PDDM Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RT3PDDM	Transistor 0.13 0.24 DESCRIPTION RT3PDDM is composite transistor built with two RT1P237 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circuit, Driver circuit 2.0 0.65 0	Isahaya Electronics Corporation

RT3P Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RT3PE3000L	Radiation-Tolerant ProASIC3 Low-Power Space-Flight Flash FPGAs Datasheet.es Advance v0.1 Radiation-Tolerant ProASIC3 Low-Power SpaceFlight Flash FPGAs with Flash*Freeze Technology Features and Benefits MIL-STD-883 Class B Qualified Packaging • Ceramic Column Grid Array with Six Sigma CopperWrapped Lead-Tin Columns • Land Grid Ar	ACTEL
RT3PE600L	Radiation-Tolerant ProASIC3 Low-Power Space-Flight Flash FPGAs Datasheet.es Advance v0.1 Radiation-Tolerant ProASIC3 Low-Power SpaceFlight Flash FPGAs with Flash*Freeze Technology Features and Benefits MIL-STD-883 Class B Qualified Packaging • Ceramic Column Grid Array with Six Sigma CopperWrapped Lead-Tin Columns • Land Grid Ar	ACTEL
RT3P11M	Composite Transistor Datasheet.es RT3P11M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION RT3P11M is a composite transistor built with two RT1P141 in SC-88 package. OUTLINE DRAWING 2.1 1.25 0.2 Unit mm FEATURE Each transistor elements are in	Isahaya Electronics

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Número de pieza	Descripción	Fabricantes	PDF
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