RSM002N06 データシート PDFこの部品の機能は「2.5v Drive Nch Mosfet」です。 |
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部品番号 |
RSM002N06 2.5V Drive Nch MOSFET www.Datasheet.jp 2.5V Drive Nch MOSFET RSM002N06 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) VMT3 Features 1) High speed switing. 2) Small package(VMT3). 3) Low voltage d ROHM Semiconductor |
文字列「 RSM002N06 」「 002N06 」で始まる検索結果です。 |
部品説明 |
R7200206 General Purpose Rectifier (600-1200 Amperes Average 4400 Volts) Powerex Power Semiconductors |
RHU002N06 Switching (60V/ 200mA) RHU002N06 Transistors Switching (60V, 200mA) RHU002N06 zFeatures 1) Low on-resistance. 2) High ESD. 3) High-speed switching. 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. zExternal dimensions (Unit : mm) (1) 0.65 0.65 0.3 (3) 1.25 ROHM Semiconductor |
RHU002N06FRA 4V Drive Nch MOS FET 4V Drive Nch MOSFET RHU002N06FRA Structure Silicon N-channel MOSFET transistor Features 1) Low on-resistance. 2) High ESD. 3) High-speed switching. 4) Low-voltage drive (4V). 5) Drive circuits can be simple. 6) Parallel use is easy. AEC-Q101 Qualified Dimensions (Unit ROHM Semiconductor |
RJU002N06 2.5V Drive Nch MOS FET RJU002N06 Transistors 2.5V Drive Nch MOS FET RJU002N06 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) UMT3 2.0 0.9 0.3 zFeatures 1) Low On-resistance. 2) Low voltage drive (2.5V drive). 0.2 0.7 (3) 1.25 (2) (1) 2.1 0.65 0.65 1. ROHM Semiconductor |
RJU002N06FRA MOSFET ( Transistor ) 2.5V Drive Nch MOSFET RRJJUU002N06FRA AEC-Q101 Qualified zStructure Silicon N-channel MOS FET zFeatures 1) Low On-resistance. 2) Low voltage drive (2.5V drive). zApplications Switching zPackaging specifications Package Type Code Basic ordering unit (pieces) RRJJUU000022 ROHM Semiconductor |
RSE002N06 2.5V Drive Nch MOSFET 2.5V Drive Nch MOSFET RSE002N06 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) EMT3 1.6 0.3 0.7 0.55 Features 1) High speed switing. 2) Small package(EMT3). 3) Low voltage drive(2.5V drive). (1)Source (2)Gate (3)Drain (3) 0.8 (2) (1) ROHM Semiconductor |
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