Datasheet RQJ0306FQDQS Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RQJ0306FQDQS	Silicon P-Channel MOS FET RQJ0306FQDQS Silicon P Channel MOS FET Power Switching Features • Low gate drive VDSS : –30 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional power package (UPAK) Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 1G Notes: Mar	Renesas

RQJ0306FQ Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RQJ0306FQDQS	Silicon P-Channel MOS FET RQJ0306FQDQS Silicon P Channel MOS FET Power Switching Features • Low gate drive VDSS : –30 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional power package (UPAK) Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2	Renesas
RQJ0306FQDQA	Silicon P-Channel MOS FET RQJ0306FQDQA Silicon P Channel MOS FET Power Switching Features • Low gate drive VDSS : –30 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Notes:	Renesas

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Número de pieza	Descripción	Fabricantes	PDF
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