RQA0009SXAQS データシート PDFこの部品の機能は「SilICon N-channel Mos Fet」です。 |
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部品番号 |
RQA0009SXAQS Silicon N-Channel MOS FET www.Datasheet.jp RQA0009SXAQS Silicon N-Channel MOS FET REJ03G1566-0100 Rev.1.00 Jul 04, 2007 Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE Renesas Technology |
文字列「 RQA0009 」「 0009SXAQS 」で始まる検索結果です。 |
部品説明 |
RQA0009TXDQS Silicon N-Channel MOS FET RQA0009TXDQS Silicon N-Channel MOS FET REJ03G1520-0100 Rev.1.00 Jul 04, 2007 Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz) • Compact package capable of surface mounting Renesas Technology |
AGN20009 GN RELAYS High sensitivity, 100 mW Nominal operating power, GN RELAYS (AGN)2 Form C and 1 A Slim body type relays RoHS compliant FEATURES 1. Slim compact size 10.6 (L) × 5.7 (W) × 9.0 (H) mm .417 (L) × .224 (W) × .354 (H) inch 2. High sensitivity single side stable type (Nominal oper Panasonic |
AGN20009 ULTRA-SMALL PACKAGE SLIM POLARIZED RELAY GNTESTING ULTRA-SMALL PACKAGE GN-RELAYSSLIM POLARIZED RELAY 10.60±0.3 .417±.012 5.70±0.3 .224±.012 9.00±0.3 .354±.012 10.60±0.3 .417±.012 5.70±0.3 .224±.012 Max.10.00 .394 mm inch FEATURES • Compact slim body saves space Thanks to the small surface area of 5.7 mm Nais |
AT10-0009 Voltage Variable Absorptive Attenuator/ 800 - 1000 MHz Voltage Variable Absorptive Attenuator, 800 - 1000 MHz V 7.00 AT10-0009 Features n n n n n n n n n n SOW-16 Input IP3: +31 dBm Min. (Full Attenuation Range) Input IP3 is 15 -20 dB Better Than GaAs Linear Operation: +20 dBm Min. Plastic SOIC, Wide Body, SMT Package 38 dB Dyna Tyco Electronics |
AT10-0009-TB Voltage Variable Absorptive Attenuator/ 800 - 1000 MHz Voltage Variable Absorptive Attenuator, 800 - 1000 MHz V 7.00 AT10-0009 Features n n n n n n n n n n SOW-16 Input IP3: +31 dBm Min. (Full Attenuation Range) Input IP3 is 15 -20 dB Better Than GaAs Linear Operation: +20 dBm Min. Plastic SOIC, Wide Body, SMT Package 38 dB Dyna Tyco Electronics |
AT10-0009TR Voltage Variable Absorptive Attenuator/ 800 - 1000 MHz Voltage Variable Absorptive Attenuator, 800 - 1000 MHz V 7.00 AT10-0009 Features n n n n n n n n n n SOW-16 Input IP3: +31 dBm Min. (Full Attenuation Range) Input IP3 is 15 -20 dB Better Than GaAs Linear Operation: +20 dBm Min. Plastic SOIC, Wide Body, SMT Package 38 dB Dyna Tyco Electronics |
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