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Datasheet RP1H Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | RP1H | Ultra-Fast-Recovery Rectifier Diodes Ultra-Fast-Recovery Rectifier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)
50Hz Half-cycle Sinewave Single Shot
Electrical Characteristics (Ta = 25°C) Tstg (°C) VF (V) max IF (A) IR (µA) IR (H) (µA)
Others
Tj (°C)
t rr (ns)
IF /IRP (mA)
t rr (ns)
I |
Sanken electric |
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2 | RP1H | Ultra-Fast-Recovery Rectifier Diodes Ultra-Fast-Recovery Rectifier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)
50Hz Half-cycle Sinewave Single Shot
Electrical Characteristics (Ta = 25°C) Tstg (°C) VF (V) max IF (A) IR (µA) IR (H) (µA)
Others
Tj (°C)
t rr (ns)
IF /IRP (mA)
t rr (ns)
I |
Sanken electric |
|
1 | RP1H065SP | 4V Drive Pch MOSFET Data Sheet
4V Drive Pch MOSFET
RP1H065SP
Structure Silicon P-channel MOSFET
Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6).
Dimensions (Unit : mm)
MPT6 (Single)
(6) (5) (4)
(1) (2) (3)
Application Switching
Packaging spec |
ROHM Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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