RN2968 データシート PDFこの部品の機能は「(rn2967 - Rn2969) Transistor SilICon PNP Epitaxial Type」です。 |
検索結果を表示する |
部品番号 |
RN2968 (RN2967 - RN2969) Transistor Silicon PNP Epitaxial Type RN2967~RN2969 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2967,RN2968,RN2969 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z Including two devices i Toshiba |
文字列「 RN2968 」「 2968 」で始まる検索結果です。 |
部品説明 |
RN2968CT (RN2967CT - RN2969CT) Transistor Silicon PNP Epitaxial Type RN2967CT~RN2969CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2967CT,RN2968CT,RN2969CT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 1.0±0.05 0.15±0.03 0.2±0.03 Unit: mm • • Two devi Toshiba |
RN2968FE (RN2967FE - RN2969FE) Transistor Silicon PNP Epitaxial Type RN2967FE~RN2969FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2967FE,RN2968FE,RN2969FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • • Two devices are incorporated into an Extreme-Super- Toshiba |
RN2968FS (RN2967FS - RN2969FS) Transistor Silicon PNP Epitaxial Type RN2967FS~RN2969FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2967FS,RN2968FS,RN2969FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 1.0±0.05 Unit: mm 0.35 0.35 1.0±0.05 • Incorporati Toshiba |
2SK2968 N CHANNEL MOS TYPE (HIGH SPEED/ HIGH VOLTAGE SWITCHING/ DC-DC CONVERTER/ RELAY DRIVE AND MOTOR DRIVE APPLICATIONS) 2SK2968 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2968 DC−DC Converter, Relay Drive and Motor Drive Applications l Low drain−source ON resistance l High forward transfer admittance : RDS (ON) = 1.05 Ω (typ.) : |Yfs| = 7.6 S (typ.) Unit: mm Toshiba Semiconductor |
AM2968A 256K DMC / Driver AMD |
K2968 MOSFET ( Transistor ) - 2SK2968 2SK2968 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2968 DC−DC Converter, Relay Drive and Motor Drive Applications l Low drain−source ON resistance l High forward transfer admittance : RDS (ON) = 1.05 Ω (typ.) : |Yfs| = 7.6 S (typ.) Unit: mm Toshiba Semiconductor |
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