RN2609 データシート PDFこの部品の機能は「(rn2607 - Rn2609) Toshiba Transistor SilICon PNP Epitaxial Type (pct Process)」です。 |
検索結果を表示する |
部品番号 |
RN2609 (RN2607 - RN2609) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2607~RN2609 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2607,RN2608,RN2609 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices i Toshiba Semiconductor |
文字列「 RN2609 」「 2609 」で始まる検索結果です。 |
部品説明 |
1N2609 GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor |
23HY2609 Hybrid Stepper Motors HYBRID STEPPING MOTORS ƶ0.39in. ƶ1.10in. ƶ1.38in. ƶ1.53in. ƶ1.65in. ƶ2.22in. 2.25in. ƶ2.36in. ƶ3.35in. 3.39in. (ƶ10mm) (ƶ28mm) (ƶ35mm) (ƶ39mm) (ƶ42mm) (ƶ56.4mm) (57.2mm) (ƶ60mm) (ƶ85mm) (86mm) 23HY SERIES 1.8° Key Features I High Accuracy I Low Inertia ETC |
2609B Broadband Photodiode Module Data Sheet August 2000 2609B Broadband Photodiode Module Description The 2609B is a packaged impedance-matched photodiode module with internal gain designed for use in optical broadband receivers in fiber-optic networks. The patented impedance-match technology results in improve AgereSystems |
2609C Broadband Photodiode Module Data Sheet August 2000 2609C Broadband Photodiode Module Description The 2609C is a packaged impedance-matched photodiode module with internal gain designed for use in optical broadband receivers in fiber-optic networks. The patented impedance-match technology results in improve AgereSystems |
2N2609 POWER MOSFET P CHANNEL Technical Data 2N2609 JAN POWER MOSFET P CHANNEL Processed per MIL-PRF-19500/296 …DESIGNED FOR GENERAL PURPOSE SMALL SIGNAL SWITCHING AND AMPLIFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS (TA = 250C unless otherwise noted) Parameters / Test Conditions Symbol Value Gate-Source Vo NES |
2N2609 P-CHANNEL J-FET TECHNICAL DATA P-CHANNEL J-FET Qualified per MIL-PRF-19500/296 Devices 2N2609 Qualified Level JAN ABSOLUTE MAXIMUM RATINGS (TA = +250C unless otherwise noted) Parameters / Test Conditions Symbol Value Gate-Source Voltage Power Dissipation (1) TA = +250C Operating Junction & Stor Microsemi Corporation |
当社のサイトでは、半導体やセンサーからモーター、電源に至るまで、さまざまな製品のデータシートを簡単に検索してダウンロードできる集中型プラットフォームを提供しています。 |