RN1707JE データシート PDFこの部品の機能は「Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit ApplICations.」です。 |
検索結果を表示する |
部品番号 |
RN1707JE Switching/ Inverter Circuit/ Interface Circuit and Driver Circuit Applications. RN1707JE~RN1709JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1707JE,RN1708JE,RN1709JE Switching, Inverter Circuit, Interface Circuit and Driver Toshiba Semiconductor |
文字列「 RN1707 」「 1707JE 」で始まる検索結果です。 |
部品説明 |
RN1707 Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit Applications RN1707~RN1709 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1707,RN1708,RN1709 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in USV (ultra super mini type with 5 leads) l With built-in bias resistors l Simp Toshiba Semiconductor |
2SA1707 PNP/NPN Epitaxial Planar Silicon Transistors Ordering number:EN3093 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1707/2SC4487 High-Current Switching Applications Features · Adoption of FBET, MBIT processes. · Large current capacity, wide ASO. · Low collector-to-emitter saturation voltage. · Fast switching speed. P Sanyo Semicon Device |
2SA1707 Bipolar Transistor Ordering number : EN3093A 2SA1707/2SC4487 Bipolar Transistor (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single NMP http://onsemi.com Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity, wide ASO • Fast switchin ON Semiconductor |
2SB1707 Low frequency amplifier 2SB1707 Transistors Low frequency amplifier 2SB1707 !Application Low frequency amplifier Driver !External dimensions (Units : mm) 2.8 1.6 0.95 0.95 (1) 1.9 0.4 (3) !Features 1) A collector current is large. (4A) 2) VCE(sat) ≤ −250mV At IC = −2A / IB = −40mA (2) 2. ROHM Semiconductor |
2SC1707 LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING
Hitachi Semiconductor |
2SD1707 Silicon NPN epitaxial planar type Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit: mm (0.7) For power switching Complementary to 2SB1156 21.0±0.5 15.0±0.3 11.0±0.2 5.0±0.2 (3.2) ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward curre Panasonic Semiconductor |
当社のサイトでは、半導体やセンサーからモーター、電源に至るまで、さまざまな製品のデータシートを簡単に検索してダウンロードできる集中型プラットフォームを提供しています。 |