RN1205 データシート PDFこの部品の機能は「Toshiba Transistor SilICon NPN Epitaxial Type (pct Process)」です。 |
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部品番号 |
RN1205 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1201~RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1201,RN1202,RN1203,RN1204,RN1205,RN1206 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Wi Toshiba Semiconductor |
文字列「 RN1205 」「 1205 」で始まる検索結果です。 |
部品説明 |
1N1205 Silicon Power Rectifier Microsemi Corporation |
1N1205 Diode Switching 500V 12A 2-Pin DO-4 New Jersey Semiconductor |
1N1205 SILICON POWER RECTIFIER 1N1199(A,B)-1N1206(A,B) High-reliability discrete products and engineering services since 1977 SILICON POWER RECTIFIER FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-R Digitron Semiconductors |
1N1205A Silicon Power Rectifier Microsemi Corporation |
1N1205A MEDIUM POWER SILICON RECTIFIER DIODES International Rectifier |
1N1205A Medium Power Silicon Rectifier Diodes 1N1...A, 1N36..A Series Vishay High Power Products Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 to 1000 V • High surge capability • Low thermal impedance RoHS COMPLIANT • High temperature rating • Can be supplied as JAN and JAN-TX Vishay |
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