RMM2080 データシート PDFこの部品の機能は「2-18 Ghz Wideband Variable-gain Driver Amplifier」です。 |
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部品番号 |
RMM2080 2-18 GHz Wideband Variable-Gain Driver Amplifier RMM2080 May 2004 RMM2080 2-18 GHz Wideband Variable-Gain Driver Amplifier General Description The Fairchild Semiconductor’s RMM2080 GaAs MMIC device is a three-stage distributed medium-power ampli Fairchild Semiconductor |
文字列「 RMM2080 」「 2080 」で始まる検索結果です。 |
部品説明 |
2SA2080 SILICON PNP EPITAXIAL To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003 Renesas Technology |
2SK2080-01 N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK2080-01 DESCRIPTION ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed APPLICATIONS ·Switching regulators ·UPS ·DC-DC Converters ·General purp Inchange Semiconductor |
2SK2080-01R N-CHANNEL SILICON POWER MOS-FET Fuji Electric |
ADNS-2080 Low Power Optical Mouse Sensor ADNS-2080 Low Power Optical Mouse Sensor Data Sheet Description The Avago Technologies ADNS-2080 is a low power, small form factor optical mouse sensor. It has a new low-power architecture and automatic power management modes, making it ideal for battery, po Avago Technologies |
APT12080JVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs APT12080JVR 1200V 15A 0.800W S G D S POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves fas Advanced Power Technology |
APT12080LVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT12080LVR 1200V 16A 0.800Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster sw Advanced Power Technology |
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