RM1Z データシート PDFこの部品の機能は「Rectifier Diodes」です。 |
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部品番号 |
RM1Z Rectifier Diodes Sanken electric |
文字列「 RM1 」「 1Z 」で始まる検索結果です。 |
部品説明 |
RM1 Rectifier Diodes Sanken electric |
RM10 Rectifier Diodes Sanken electric |
RM10 SILICON RECTIFIER DIODES RM10 - RM10Z PRV : 200 - 800 Volts Io : 1.2 - 1.5 Amperes FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop SILICON RECTIFIER DIODES D2 0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN. 0.284 (7.20) EIC discrete Semiconductors |
RM100 HIGH SPEED SWITCHING USE INSULATED TYPE MITSUBISHI FAST RECOVERY DIODE MODULES RM100CA/C1A-XXF HIGH SPEED SWITCHING USE INSULATED TYPE RM100CA/C1A-XXF DC current ................................ 100A Repetitive peak reverse voltage .. 600/800/1000/1200V • trr Reverse recovery time ............. 0.8µs • Insulate Mitsubishi Electric Semiconductor |
RM100C1A-XXF HIGH SPEED SWITCHING USE INSULATED TYPE MITSUBISHI FAST RECOVERY DIODE MODULES RM100CA/C1A-XXF HIGH SPEED SWITCHING USE INSULATED TYPE RM100CA/C1A-XXF DC current ................................ 100A Repetitive peak reverse voltage .. 600/800/1000/1200V • trr Reverse recovery time ............. 0.8µs • Insulate Mitsubishi Electric Semiconductor |
RM100CA-XXF HIGH SPEED SWITCHING USE INSULATED TYPE MITSUBISHI FAST RECOVERY DIODE MODULES RM100CA/C1A-XXF HIGH SPEED SWITCHING USE INSULATED TYPE RM100CA/C1A-XXF DC current ................................ 100A Repetitive peak reverse voltage .. 600/800/1000/1200V • trr Reverse recovery time ............. 0.8µs • Insulate Mitsubishi Electric Semiconductor |
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