RLD03N06CLE データシート PDFこの部品の機能は「0.3a/ 60v/ 6 Ohm/ Esd Rated/ Current Limited/ Voltage Clamped/ LogIC Level N-channel」です。 |
検索結果を表示する |
部品番号 |
RLD03N06CLE 0.3A/ 60V/ ESD Rated/ Current Limited/ Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs S E M I C O N D U C T O R RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE July 1996 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs Packages JEDE Fairchild Semiconductor |
RLD03N06CLE 0.3A/ 60V/ 6 Ohm/ ESD Rated/ Current Limited/ Voltage Clamped/ Logic Level N-Channel Power MOSFETs RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE Data Sheet July 1999 File Number 3948.5 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs These are intelligen Intersil Corporation |
文字列「 RLD03N06 」「 03N06CLE 」で始まる検索結果です。 |
部品説明 |
RLD03N06CLESM 0.3A/ 60V/ ESD Rated/ Current Limited/ Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs S E M I C O N D U C T O R RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE July 1996 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs Packages JEDEC TO-220AB SOURCE DRAIN GATE Features • • • • • • • 0.30A, 60V rD Fairchild Semiconductor |
RLD03N06CLESM 0.3A/ 60V/ 6 Ohm/ ESD Rated/ Current Limited/ Voltage Clamped/ Logic Level N-Channel Power MOSFETs RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE Data Sheet July 1999 File Number 3948.5 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs These are intelligent monolithic power circuits which incorporate a lateral bipolar transistor, resi Intersil Corporation |
BL0306 Digital Echo w w a D . w Description The BL0306 is a digital ECHO IC fabricated with silicon gate CMOS technology . The BL0306 converts an input analog signal to a digital signal and writes it into a memory IC,After a delay it reads out the digital signal from the memory IC and then conver Shanghai Belling |
BL0306 Digital reverb BL0306 ( 810 :200233 Tel:86-21-64850700 Fax:86-21-64854424 ) BL0306 CMOS BBD A-D D-A BL0306 M50195P ) BL0306 ADM( ) (BL0306 · ·3 · ( -90dBV) ( 0.5% ) (100 150 200ms) OK A6 MDI CAS RESET DO W RAS A0 A2 A1 A7 A5 A4 A3 D-GND CC1 CC2 SHORT 1 2 3 4 5 6 7 8 9 10 11 12 13 Shanghai Belling |
C3D03060A Silicon Carbide Schottky Diode C3D03060A Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec™ Rectifier Features Package IF (TC=135˚C) = 5.5 A Qc = 6.7 nC • • • • • • • • 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Curr Cree |
C3D03060E Silicon Carbide Schottky Diode C3D03060E Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec™ Rectifier Features Package IF (TC=135˚C) = 5.5 A Qc = 6.7 nC • • • • • • • • 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Curr Cree |
当社のサイトでは、半導体やセンサーからモーター、電源に至るまで、さまざまな製品のデータシートを簡単に検索してダウンロードできる集中型プラットフォームを提供しています。 |