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RK33 データシート PDF ( Data ) |
| 番号 | 部品番号 | 部品説明 | メーカ | |
| 2 | RK33 | SCHOTTKY BARRIER RECTIFIER DIODES RK33 - RK39 PRV : 30 - 90 Volts IO : 2.0 - 2.5 Amperes FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low cost Low forwa |
 EIC discrete Semiconductors |
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| 1 | RK33 | Schottky Barrier Diodes |
 Sanken electric |
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RK3 データシート - 検索結果 |
| 部品番号 | 部品説明 | メーカ | |
| RK39 | Schottky Barrier Diodes 90V |
Sanken electric |
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| RK33 | Schottky Barrier Diodes |
Sanken electric |
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| RK3055E | Small switching (60V/ 8A) Transistors Small switching (60V, 8A) RK3055E FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FExternal dimensions |
 Rohm |
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| RK39 | SCHOTTKY BARRIER RECTIFIER DIODES RK33 - RK39 PRV : 30 - 90 Volts IO : 2.0 - 2.5 Amperes FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low cost Low forward voltage drop SCHOTTKY BARRIER RECTIFIER DIODES D2A 0.161 (4.1) 0.154 (3.9) |
EIC discrete Semiconductors |
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| RK33 | SCHOTTKY BARRIER RECTIFIER DIODES RK33 - RK39 PRV : 30 - 90 Volts IO : 2.0 - 2.5 Amperes FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low cost Low forward voltage drop SCHOTTKY BARRIER RECTIFIER DIODES D2A 0.161 (4.1) 0.154 (3.9) |
EIC discrete Semiconductors |
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| RK30xx | Technical Reference Manual RK30xxTechnical Reference ManualRev2.0 RK30xx Technical Reference Manual Revision 1.0 Feb. 2012 High Performance and Low-power Processor for Digital Media Application 1 RK30xxTechnical Reference ManualRev2.0 Revision History Date Revision Description 2012-02-29 1.0 Initi |
 Rockchip |
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