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Datasheet RJS-12AA08T089H Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | RJS-12AA08T089H | RJ-45 MODULAR JACK FOR FAST ETHERNET
RJ-45 MODULAR JACK FOR FAST ETHERNET 100BASE-TX 2x6 PORT
Networking Components
FEATURES
COST SAVING - REDUCE PCB SPACE - SAVE INVENTORY AND ASSEMBLY COST IMPROVE EMI PERFORMANCE - REDUCE THE OVERALL LENGTH OF SIGNAL PATH ON PCB AND LOWER NOISE LEVEL INTEGRATED HIGH VOLTAGE CAP |  DELTA | data |
RJS Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | RJS-12A08T109A | RJ-45 MODULAR JACK FOR FAST ETHERNET
RJ-45 MODULAR JACK FOR FAST ETHERNET 100BASE-TX 2x6 PORT
Networking Components
FEATURES
COST SAVING - REDUCE PCB SPACE - SAVE INVENTORY AND ASSEMBLY COST IMPROVE EMI PERFORMANCE - REDUCE THE OVERALL LENGTH OF SIGNAL PATH ON PCB AND LOWER NOISE LEVEL INTEGRATED HIGH VOLTAGE CAP DELTA data | | |
| 2 | RJS-12AA08T089H | RJ-45 MODULAR JACK FOR FAST ETHERNET
RJ-45 MODULAR JACK FOR FAST ETHERNET 100BASE-TX 2x6 PORT
Networking Components
FEATURES
COST SAVING - REDUCE PCB SPACE - SAVE INVENTORY AND ASSEMBLY COST IMPROVE EMI PERFORMANCE - REDUCE THE OVERALL LENGTH OF SIGNAL PATH ON PCB AND LOWER NOISE LEVEL INTEGRATED HIGH VOLTAGE CAP DELTA data | | |
| 3 | RJS6004TDPP-EJ | SiC Schottky Barrier Diode RJS6004TDPP-EJ
600V - 10A - Diode SiC Schottky Barrier Diode
Features
• New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery
Outline
RENESAS Package code: PRSS0002ZA-A (Package name: TO-220FP-2L)
12
Preliminary Datasheet
R07DS0896EJ0300 Rev.3.00
Jan 23,  Renesas diode | | |
| 4 | RJS6004WDPK | SiC Schottky Barrier Diode RJS6004WDPK
600V - 20A - Diode SiC Schottky Barrier Diode
Features
• New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
4
12 3
Preliminary Datasheet
R07DS0897EJ0300 Rev.3.00
Jan 29, 2014
Renesas diode | | |
| 5 | RJS6005TDPP-EJ | SiC Schottky Barrier Diode RJS6005TDPP-EJ
600V - 15A - Diode SiC Schottky Barrier Diode
Features
• New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery
Outline
RENESAS Package code: PRSS0002ZA-A (Package name: TO-220FP-2L)
12
Preliminary Datasheet
R07DS0900EJ0300 Rev.3.00
Jan 23, Renesas diode | | |
| 6 | RJS6005WDPK | SiC Schottky Barrier Diode RJS6005WDPK
600V - 30A - Diode SiC Schottky Barrier Diode
Features
• New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
4
12 3
Preliminary Datasheet
R07DS0901EJ0201 Rev.2.01
Jan 31, 2014
Renesas diode | |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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