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Datasheet RJP63F3DPP-M0 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | RJP63F3DPP-M0 | N-Channel IGBT Preliminary Datasheet
RJP63F3DPP-M0
Silicon N Channel IGBT High Speed Power Switching
Features
• • • • • Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 100 ns typ Low leak current ICES = 1 μA m |
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RJP63F3DPP Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
RJP63F3DPP-M0 | N-Channel IGBT |
Renesas |
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Número de pieza | Descripción | Fabricantes | |
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