RJP60V0DPM データシート PDFこの部品の機能は「N-channel Igbt」です。 |
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部品番号 |
RJP60V0DPM N-Channel IGBT Preliminary Datasheet RJP60V0DPM 600V - 22A - IGBT Application: Inverter Features High breakdown-voltage Low Collector to Emitter saturation Voltage VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = Renesas |
文字列「 RJP60V0 」「 60V0DPM 」で始まる検索結果です。 |
部品説明 |
RJP60V0DPM-80 IGBT RJP60V0DPM-80 600V - 22A - IGBT Application: Inverter Features • High breakdown-voltage • Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Short circuit withstand time (6 μs typ.) • Trench gate and thin wafer tech Renesas |
0230600L Silicon Controlled Rectifier Microsemi Corporation |
0230600L Silicon Controlled Rectifier Microsemi Corporation |
0505J250P600BQT High Q capacitors [email protected] www.syfer.com High Q capacitors MS range +44 1603 723310 +44 1603 723301 The Syfer MS range offers a very stable, High Q material system that provides excellent, low loss performance in systems below 3GHz. Available in 0402 to 3640 case sizes with various te Syfer Technology |
0603J250P600BQT High Q capacitors [email protected] www.syfer.com High Q capacitors MS range +44 1603 723310 +44 1603 723301 The Syfer MS range offers a very stable, High Q material system that provides excellent, low loss performance in systems below 3GHz. Available in 0402 to 3640 case sizes with various te Syfer Technology |
0805J250P600BQT High Q capacitors [email protected] www.syfer.com High Q capacitors MS range +44 1603 723310 +44 1603 723301 The Syfer MS range offers a very stable, High Q material system that provides excellent, low loss performance in systems below 3GHz. Available in 0402 to 3640 case sizes with various te Syfer Technology |
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