Datasheet RJP60F0DPM Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RJP60F0DPM	N-Channel IGBT Preliminary Datasheet RJP60F0DPM 600 V - 25 A - IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology  High speed switching R07DS0585EJ0100 Rev.1.00 Nov 25, 2	Renesas

RJP60F0 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RJP60F0DPM	N-Channel IGBT Preliminary Datasheet RJP60F0DPM 600 V - 25 A - IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology  High speed switching R07DS0585EJ010	Renesas
RJP60F0DPE	N-Channel IGBT Preliminary Datasheet RJP60F0DPE 600 V - 25 A - IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology  High speed switching tf = 90 ns typ.	Renesas

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