RJP60D0DPE データシート PDFこの部品の機能は「N-channel Igbt」です。 |
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部品番号 |
RJP60D0DPE N-Channel IGBT Preliminary Datasheet RJP60D0DPE Silicon N Channel IGBT High Speed Power Switching Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1 Renesas |
文字列「 RJP60D0 」「 60D0DPE 」で始まる検索結果です。 |
部品説明 |
RJP60D0DPK Silicon N Channel IGBT Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C) Gate to emitter voltage rating Renesas |
RJP60D0DPM N-Channel IGBT Preliminary Datasheet RJP60D0DPM Silicon N Channel IGBT High Speed Power Switching Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25°C) Gate to emitter voltage rating Renesas |
RJP60D0DPP-M0 Silicon N Channel IGBT Preliminary Datasheet RJP60D0DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C) Gate to emitter voltage rat Renesas Technology |
0230600L Silicon Controlled Rectifier Microsemi Corporation |
0230600L Silicon Controlled Rectifier Microsemi Corporation |
0505J250P600BQT High Q capacitors [email protected] www.syfer.com High Q capacitors MS range +44 1603 723310 +44 1603 723301 The Syfer MS range offers a very stable, High Q material system that provides excellent, low loss performance in systems below 3GHz. Available in 0402 to 3640 case sizes with various te Syfer Technology |
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