Datasheet RJP6065DPM Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RJP6065DPM	N-Channel IGBT Preliminary Datasheet RJP6065DPM Silicon N Channel IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free lead plating and chip bonding R07DS0204EJ0100 R	Renesas

RJP6065 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RJP6065DPM	N-Channel IGBT Preliminary Datasheet RJP6065DPM Silicon N Channel IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free lead plating and chip bondi	Renesas

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