Datasheet RJK6029DJA Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RJK6029DJA	Silicon N Channel MOS FET High Speed Power Switching Preliminary Datasheet RJK6029DJA Silicon N Channel MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 13.5  typ. (at ID = 0.1 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting REJ03G1895-0100 Rev.1.00 Jun 18, 2010 Outline RE	Renesas Technology

RJK6029 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RJK6029DJA	Silicon N Channel MOS FET High Speed Power Switching Preliminary Datasheet RJK6029DJA Silicon N Channel MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 13.5  typ. (at ID = 0.1 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting REJ03G1895-0100 Rev.1.00 Jun	Renesas Technology

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Número de pieza	Descripción	Fabricantes	PDF
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