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Datasheet RJK5026DPP Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | RJK5026DPP | Silicon N Channel MOS FET High Speed Power Switching
RJK5026DPP
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1734-0100 Rev.1.00 Sep 11, 2008
Features
• Low on-resistance • Low leakage current • High speed switching
Outline
RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN)
D
G
1. Gate 2. Drain 3. S |
 Renesas Technology |
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| 2 | RJK5026DPP-E0 | MOS FET Preliminary Datasheet
RJK5026DPP-E0
500V - 6A - MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 1.35 typ. (at ID = 3 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching R07DS0608EJ0100 Rev.1.00 Jun 21, 2012
Outline
RENESAS Package code: PRSS |
 Renesas |
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| 1 | RJK5026DPP-M0 | Silicon N Channel MOS FET RJK5026DPP-M0
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 1.35 Ω typ. (at ID = 3 A, VGS = 10 V, Ta = 25°C)
• Low leakage current • High speed switching
Outline
RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL)
1 23
G
Absolute Maxim |
Renesas |
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