RJK5013DPP データシート PDFこの部品の機能は「SilICon N Channel Mos Fet High Speed Power Switching」です。 |
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部品番号 |
RJK5013DPP Silicon N Channel MOS FET High Speed Power Switching www.Datasheet.jp RJK5013DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1585-0100 Rev.1.00 Sep 28, 2007 Features • Low on-resistance • Low leakage current • High speed switch Renesas Technology |
文字列「 RJK5013 」「 5013DPP 」で始まる検索結果です。 |
部品説明 |
RJK5013DPE Silicon N Channel Power MOS FET RJK5013DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1488-0200 Rev.2.00 Nov 29, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D Renesas Technology |
RJK5013DPK Silicon N Channel MOS FET High Speed Power Switching RJK5013DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1491-0100 Rev.1.00 Nov 30, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D G 1. G Renesas Technology |
1N5013A (1N5008A - 1N5042A) DIODE Free Datasheet http:/// New Jersey Semi-Conductor |
2N5013 0.5AMP HIGH VOLTAGE NPN TRANSISTOR 450 VOLTS ETC |
2N5013 Bipolar NPN Device 2N5013 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 800V Seme LAB |
2N5013 Trans GP BJT NPN 800V 0.5A 3-Pin TO-39 New Jersey Semiconductor |
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