RJK1211DNS データシート PDFこの部品の機能は「N-channel Power Mosfet / Transistor」です。 |
検索結果を表示する |
部品番号 |
RJK1211DNS N-Channel Power MOSFET / Transistor Preliminary Datasheet RJK1211DNS Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RD Renesas |
文字列「 RJK1211 」「 1211DNS 」で始まる検索結果です。 |
部品説明 |
RJK1211DPA N-Channel Power MOSFET / Transistor Preliminary Datasheet RJK1211DPA Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 100 mΩ typ. (at VGS = 10 V) • Pb-free • Halogen-free • • • � Renesas |
2N1211 Trans GP BJT NPN 60V 5A 3-Pin TO-61 New Jersey Semiconductor |
2N1211 Trans GP BJT NPN 60V 5A 3-Pin TO-61 New Jersey Semiconductor |
2SD1211 Silicon NPN epitaxial planer type(For low-frequency amplification) Transistor 2SD1211 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB987 5.9± 0.2 Unit: mm 4.9± 0.2 s Features q q High collector to emitter voltage VCEO. Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier. (T Panasonic Semiconductor |
2SK1211 N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1211 DESCRIPTION ·Drain Current –ID=2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta= Inchange Semiconductor |
2SK1211 (2SKxxxx) Power MOSFET w w w a d . s a t e h 4 t e . u m o c ww.datasheet.jpom Fuji Semiconductors |
当社のサイトでは、半導体やセンサーからモーター、電源に至るまで、さまざまな製品のデータシートを簡単に検索してダウンロードできる集中型プラットフォームを提供しています。 |