RJK0655DPB データシート PDFこの部品の機能は「SilICon N Channel Power Mos Fet」です。 |
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部品番号 |
RJK0655DPB Silicon N Channel Power MOS FET RJK0655DPB 60V, 35A, 6.7m max. Silicon N Channel Power MOS FET Power Switching Features High speed switching Low drive current Low on-resistance RDS(on) = 5.3 m typ. (at VGS = 10 V) Renesas Technology |
文字列「 RJK0655 」「 0655DPB 」で始まる検索結果です。 |
部品説明 |
2SK0655 Silicon N-Channel MOS FET Silicon MOS FETs (Small Signal) 2SK0655 (2SK655) Silicon N-Channel MOS FET unit: mm For switching I Features 0.75 max. 4.0±0.2 (0.8) 3.0±0.2 2.0±0.2 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain cu Panasonic Semiconductor |
5406552-4 Modular Jacks Modular Jacks and MRJ 21 Catalog 82066 Revised 6-05 Modular Jacks and MRJ 21 Table of Contents Introduction Modular Jacks Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tyco |
5406552-x Modular Jacks Modular Jacks and MRJ 21 Catalog 82066 Revised 6-05 Modular Jacks and MRJ 21 Table of Contents Introduction Modular Jacks Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tyco |
ASI10655 NPN SILICON RF POWER TRANSISTOR TVV007 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV007 is Designed for D PACKAGE STYLE .500 6L FLG C A 2x ØN FULL R FEATURES: • • • Omnigold™ Metalization System DIM B G .725/18,42 F K H MINIMUM inches / mm E M L J I MAXIMUM inches / mm MAXIMUM RATIN Advanced Semiconductor |
GH06550B2B High Power Red Laser Diode Laser Diodes GH06550B2B GH06550B2B s (1) (2) (3) (4) (5) High Power Red Laser Diode for ✕2 Speed DVD Drive (656nm-50mW) s Outline Dimensions ❇2 ❇2 1.0±0.15 90 ±2 0.4±0.1 X Features ✕2 speed DVD-R/+R/-RW/+RW/RAM drives High power output (pulse SHARP Microelectronics |
R6220655 Fast Recovery Rectifier (550Amperes Average 1600 Volts) Powerex Power Semiconductors |
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