RJK0629DPE データシート PDFこの部品の機能は「N-channel Power Mos Fet」です。 |
検索結果を表示する |
部品番号 |
RJK0629DPE N-Channel Power MOS FET RJK0629DPE 60V, 85A, 4.5m max. N Channel Power MOS FET High-Speed Switching Use Features VDSS: 60 V RDS(on): 4.5 m (Max) ID: 85 A Outline RENESAS Package code: PRSS0004AE-B (Package nam Renesas |
文字列「 RJK0629 」「 0629DPE 」で始まる検索結果です。 |
部品説明 |
RJK0629DPK N-Channel Power MOS FET RJK0629DPK 60V, 85A, 4.5m max. N Channel Power MOS FET High-Speed Switching Use Features VDSS: 60 V RDS(on): 4.5 m (Max) ID: 100 A Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1G 1 2 3 Absolute Maximum Ratings Item Drain to source voltage Renesas |
RJK0629DPN N-Channel Power MOS FET RJK0629DPN 60V, 85A, 4.5m max. N Channel Power MOS FET High-Speed Switching Use Features VDSS: 60 V RDS(on): 4.5 m (Max) ID: 85 A Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 4 123 1G Absolute Maximum Ratings Item Drain to source volta Renesas |
AMIS-710629-A4 (AMIS-71062x-A40 CIS Module AMIS-710627-A4, AMIS-710628-A4, AMIS-710629-A4: 600dpi CIS Modules Data Sheet 1.0 General Description The AMIS-710627-A4 (PI627MC-A4), AMIS-710628-A4 (PI628MC-A4) and AMIS-710629-A4 (PI629MC-A4) are a family of contact image sensor (CIS) modules, using MOS image sensor technolo AMI SEMICONDUCTOR |
ASI10629 NPN SILICON RF POWER TRANSISTOR MLN1037S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN1037S is Designed for PACKAGE STYLE .280 4L STUD A 45° D S G FEATURES: • • • Omnigold™ Metalization System B S D C J E F G I MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG θ JC 10 A 60 V 35 V 140 W @ Advanced Semiconductor |
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