RJK0629DPE 60V, 85A, 4.5m max. N Channel Power MOS FET High-Speed Switching Use Features  VDSS: 60 V  RDS(on): 4.5 m (Max)  ID: 85 A Outline RENESAS Package code: PRSS0004AE-B (Package nam

Preliminary Datasheet RJK1211DNS Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 100 m typ. (at VGS = 10 V)  Pb-free  Halogen-free   

RJK03N2DPA 30V, 40A, 4.0mΩmax. Built in SBD N Channel Power MOS FET High Speed Power Switching Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance  Pb-free  Halogen-free Outline Prelimina

Preliminary Datasheet RJK6012DPP Silicon N Channel MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.77  typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching REJ03G1581-0200 Rev.2.00 Jun 30, 2010 Outline REN

RJK0601DPN-E0 N-Channel MOS FET 60 V, 110 A, 3.1 m Features  High speed switching  Low drive current  Low on-resistance RDS(on) = 2.5 m typ. (at VGS = 10 V)  Package TO-220AB Outline RENESAS Package code: PRSS0004AG-A (Package name: TO-220AB) 4 123 1G Prelimi

Preliminary Datasheet RJK03F8DNS Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7 m typ. (at VGS = 8 V)  Pb-free  Halogen-f

RJK4015DPK 400V - 30A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.14  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) Preliminary