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Datasheet RJK0454DPB Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | RJK0454DPB | Silicon N Channel Power MOS FET
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company n | Renesas Technology | data |
RJK Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | RJK005N03 | Drive Nch MOS FET
RJK005N03
Transistors
2.5V Drive Nch MOS FET
RJK005N03
zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm)
SMT3
2.9 1.1 0.4
(3)
zFeatures 1) Low On-resistance. 2) Low voltage drive (2.5V drive).
0.8
(2)
(1)
1.6 2.8
0.95 0.95 0.15 1.9
zApplications Switc ROHM Semiconductor data | | |
2 | RJK005N03FRA | Nch 30V 500mA Small Signal MOSFET RJK005N03FRA
Nch 30V 500mA Small Signal MOSFET
VDSS RDS(on)(Max.)
ID PD
30V 580mΩ ±500mA 200mW
lFeatures
1) Low on-resistance 2) Ultra low voltage drive (2.5V drive) 3) AEC-Q101 Qualified
lOutline
SOT-346
SC-59
SMT3
lInner circuit
Datasheet
lApplic ROHM Semiconductor mosfet | | |
3 | RJK0204DPA | Silicon N Channel Power MOS FET Preliminary Datasheet
RJK0204DPA
Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1922-0210 Power Switching Rev.2.10
Apr 27, 2010
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.2 m Renesas Technology data | | |
4 | RJK0206DPA | Silicon N Channel Power MOS FET Preliminary Datasheet
RJK0206DPA
Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1923-0200 Power Switching Rev.2.00
Apr 27, 2010
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.5 m Renesas Technology data | | |
5 | RJK0208DPA | Silicon N Channel Power MOS FET Preliminary Datasheet
RJK0208DPA
Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1924-0200 Power Switching Rev.2.00
Apr 27, 2010
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.6 m Renesas Technology data | | |
6 | RJK0210DPA | Silicon N Channel Power MOS FET Power Switching Preliminary Datasheet
RJK0210DPA
Silicon N Channel Power MOS FET Power Switching
Features
Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 10 V) Pb-free Halogen-free REJ03G19 Renesas Technology data | | |
7 | RJK0211DPA | Silicon N Channel Power MOS FET Power Switching Preliminary Datasheet
RJK0211DPA
Silicon N Channel Power MOS FET Power Switching
Features
Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.8 m typ. (at VGS = 10 V) Pb-free Halogen-free REJ03G19 Renesas Technology data | |
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