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Datasheet RJH60F0DPQ-A0 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | RJH60F0DPQ-A0 | High Speed Power Switching Preliminary Datasheet
RJH60F0DPQ-A0
600 V - 25 A - IGBT High Speed Power Switching
Features
Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High | Renesas | data |
RJH Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | RJH1BF6RDPQ-80 | High Speed Power Switching Preliminary Datasheet
RJH1BF6RDPQ-80
Silicon N Channel IGBT High Speed Power Switching
Features
• • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.7 V Renesas data | | |
2 | RJH1BF7RDPQ-80 | High Speed Power Switching Preliminary Datasheet
RJH1BF7RDPQ-80
Silicon N Channel IGBT High Speed Power Switching
Features
• • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.6 V Renesas data | | |
3 | RJH1CD5DPQ-A0 | High Speed Power Switching Preliminary Datasheet
RJH1CD5DPQ-A0
1200 V - 15 A - IGBT Application: Inverter
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (trr = 100 ns typ.) in Renesas data | | |
4 | RJH1CD5DPQ-E0 | IGBT, Insulated Gate Bipolar Transistor Preliminary Datasheet
RJH1CD5DPQ-E0
1200V - 20A - IGBT Application: Inverter
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C) Built-in fast recovery diode (trr = 200 ns typ.) in o Renesas igbt | | |
5 | RJH1CD6DPQ-A0 | IGBT, Insulated Gate Bipolar Transistor Preliminary Datasheet
RJH1CD6DPQ-A0
1200 V - 20 A - IGBT Application: Inverter
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (trr = 100 ns typ.) in Renesas igbt | | |
6 | RJH1CD6DPQ-E0 | IGBT, Insulated Gate Bipolar Transistor Preliminary Datasheet
RJH1CD6DPQ-E0
1200V - 25A - IGBT Application: Inverter
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) Built-in fast recovery diode (trr = 200 ns typ.) in o Renesas igbt | | |
7 | RJH1CD7DPQ-A0 | IGBT, Insulated Gate Bipolar Transistor Preliminary Datasheet
RJH1CD7DPQ-A0
1200 V - 25 A - IGBT Application: Inverter
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (trr = 100 ns typ.) in Renesas igbt | |
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Número de pieza | Descripción | Fabricantes | |
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