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Datasheet RJH1CF4RDPQ-80 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | RJH1CF4RDPQ-80 | High Speed Power Switching Preliminary Datasheet
RJH1CF4RDPQ-80
Silicon N Channel IGBT High Speed Power Switching
Features
Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 20 |
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RJH1CF4RDPQ Datasheet ( Hoja de datos ) - resultados coincidentes |
| Número de pieza | Descripción | Fabricantes | |
| RJH1CF4RDPQ-80 | High Speed Power Switching |
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