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RJH1CD5DPQ-A0 データシート PDF 検索 |
| 番号 | 部品番号 | 部品説明 | メーカ | |
| 1 | RJH1CD5DPQ-A0 | High Speed Power Switching Preliminary Datasheet RJH1CD5DPQ-A0 1200 V - 15 A - IGBT Application: Inverter Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wafer technology High speed switching |
 Renesas |
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RJH1CD5DPQ データシート - 検索結果 |
| 部品番号 | 部品説明 | メーカ | |
| RJH1CD5DPQ-E0 | IGBT Preliminary Datasheet RJH1CD5DPQ-E0 1200V - 20A - IGBT Application: Inverter Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C) Built-in fast recovery diode (trr |
Renesas |
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| RJH1CD5DPQ-A0 | High Speed Power Switching Preliminary Datasheet RJH1CD5DPQ-A0 1200 V - 15 A - IGBT Application: Inverter Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (t |
Renesas |
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