| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | RJH1BF7RDPQ-80 | High Speed Power Switching Preliminary Datasheet RJH1BF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 35 A, VGE = 15V, Tj = 25°C) • Gate to emitter voltage rating ± |
 Renesas |
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