Datasheet RHU002N06FRA Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RHU002N06FRA	4V Drive Nch MOS FET 4V Drive Nch MOSFET RHU002N06FRA Structure Silicon N-channel MOSFET transistor Features 1) Low on-resistance. 2) High ESD. 3) High-speed switching. 4) Low-voltage drive (4V). 5) Drive circuits can be simple. 6) Parallel use is easy. AEC-Q101 Qualified Dimensions (Unit : mm) UMT3 SOT-323	ROHM Semiconductor

RHU002N06 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RHU002N06	Switching (60V/ 200mA) RHU002N06 Transistors Switching (60V, 200mA) RHU002N06 zFeatures 1) Low on-resistance. 2) High ESD. 3) High-speed switching. 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. zExternal dimensions (Unit : mm) (1) 0.65 0.65 0.3 (3) 1.25	ROHM Semiconductor
RHU002N06FRA	4V Drive Nch MOS FET 4V Drive Nch MOSFET RHU002N06FRA Structure Silicon N-channel MOSFET transistor Features 1) Low on-resistance. 2) High ESD. 3) High-speed switching. 4) Low-voltage drive (4V). 5) Drive circuits can be simple. 6) Parallel use is easy. AEC-Q101 Qualified Dimensions (Unit	ROHM Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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