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RHR1K160D データシート PDF

この部品の機能は「1a/ 600v Hyperfast Dual Diode」です。


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部品番号
RHR1K160D

1A/ 600V Hyperfast Dual Diode


RHR1K160D Data Sheet January 2000 File Number 4788 1A, 600V Hyperfast Dual Diode Features [ /Title The RHR1K160D is a hyperfast dual diode with soft recovery • Hyperfast with Soft Recovery . . . .


Intersil Corporation
Intersil Corporation

データシート pdf



文字列「 RHR1K160 」「 1K160D 」で始まる検索結果です。

部品説明

RHR1K160

1A/ 600V Hyperfast Diode

RHR1K160 Data Sheet January 2000 File Number 4789 1A, 600V Hyperfast Diode The RHR1K160 is a hyperfast diode with soft recovery characteristics (t rr < 25ns). It has half the recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar constr

Intersil Corporation
Intersil Corporation

 データシート pdf


2SA1160

Silicon PNP Epitaxial Type Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications 2SA1160 Unit: mm • High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120

Toshiba Semiconductor
Toshiba Semiconductor

 データシート pdf


2SA1160

Plastic-Encapsulated Transistors

Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors TO-92MOD 1. EMITTER 2SA1160 FEATURE Power dissipation TRANSISTOR (PNP) 2. COLLECTOR 3. BASE ww.datasheet.jpom PCM : 0.9 W (Tamb=25℃) Collector current ICM: -2A Collector-base voltage V(BR)CBO: -

TRANSYS Electronics Limited
TRANSYS Electronics Limited

 データシート pdf


2SB1160

SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1160 DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1715 ·High fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifi

SavantIC
SavantIC

 データシート pdf


2SD1160

Silicon NPN Epitaxial Type TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SD1160 Switching Applications Suitable for Motor Drive Applications 2SD1160 Unit: mm • High DC current gain • Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) • Built-in free wheel diode Ab

Toshiba Semiconductor
Toshiba Semiconductor

 データシート pdf


2SK1160

Silicon N-Channel MOS FET

2SK1159, 2SK1160 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline TO-220AB

Hitachi Semiconductor
Hitachi Semiconductor

 データシート pdf

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