RGTH00TS65 データシート PDFこの部品の機能は「Field Stop Trench Igbt」です。 |
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部品番号 |
RGTH00TS65 Field Stop Trench IGBT RGTH00TS65 650V 50A Field Stop Trench IGBT Data Sheet VCES IC(100°C) VCE(sat) (Typ.) PD 650V 50A 1.6V 277W lFeatures 1) Low Collector - Emitter Saturation Voltage 2) High Speed Switching 3) Low ROHM Semiconductor |
文字列「 RGTH00TS65 」「 00TS65 」で始まる検索結果です。 |
部品説明 |
RGTH00TS65D Field Stop Trench IGBT RGTH00TS65D 650V 50A Field Stop Trench IGBT Data Sheet VCES IC(100°C) VCE(sat) (Typ.) PD 650V 50A 1.6V 277W lFeatures 1) Low Collector - Emitter Saturation Voltage 2) High Speed Switching 3) Low Switching Loss & Soft Switching 4) Built in Very Fast & Soft Recovery FRD (RF ROHM Semiconductor |
2SK0065 Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal) 2SK0065 (2SK65) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 unit: mm I Features G Diode is connected between gate and source G Low noise voltag Panasonic Semiconductor |
ADC10065 ADC10065 10-Bit 65 MSPS 3V A/D Converter (Rev. H) Texas Instruments |
C3D10065A Silicon Carbide Schottky Diode www.datasheet.jp C3D10065A–Silicon Carbide Schottky Diode Z-Rec™ Rectifier Features VRRM = 650 V IF(AVG) = 10 A Qc = 25 nC Package • • • • • • • 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Fre Cree |
C3D10065I Silicon Carbide Schottky Diode C3D10065I Silicon Carbide Schottky Diode VRRM = 650 V Z-Rec™ Rectifier Features Package IF (TC=125˚C) = 10 A Qc = 25 nC • • • • • • 650-Volt Schottky Rectifier Ceramic Package provides 2.5kV isolation Zero Reverse Recovery Current Hig Cree |
C3D30065D Silicon Carbide Schottky Diode C3D30065D Silicon Carbide Schottky Diode Z-Rec® Rectifier Features Package VRRM = 650 V IF (TC=135˚C) = 36 A** Qc = 89 nC** • 650 Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Cree |
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