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Datasheet RG4A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | RG4A | Ultra-Fast-Recovery Rectifier Diodes Ultra-Fast-Recovery Rectifier Diodes 600V
VRM (V) Package Part Number I F (AV) (A) 30.0 0.5 0.5 0.6 1.0 1.0 1.2 2.0 1.0 (2.0) 3.0 4.0 5.0 5.0 IFSM (A)
50Hz
Half-cycle Sinewave Single Shot
t rr t rr
1 2
: I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point) : I F / I |  Sanken electric | rectifier |
| 2 | RG4A | GLASS PASSIVATED FAST SWITCHING RECTIFIER RG4A THRU RG4J
GLASS PASSIVATED FAST SWITCHING RECTIFIER
Reverse Voltage - 50 to 600 Volts Forward Current - 3.0 Amperes
FEATURES
D
Case Style G4
0.180 (4.6) 0.115 (2.9) DIA.
1.0 (25.4) MIN.
0.300 (7.6) MAX.
0.042 (1.07) 0.038 (0.962) DIA. 1.0 (25.4) MIN.
♦ High temperature metallurgically bo |  General Semiconductor | rectifier |
| 3 | RG4A | Ultra-Fast-Recovery Rectifier Diodes Ultra-Fast-Recovery Rectifier Diodes 600V
VRM (V) Package Part Number I F (AV) (A) 30.0 0.5 0.5 0.6 1.0 1.0 1.2 2.0 1.0 (2.0) 3.0 4.0 5.0 5.0 IFSM (A)
50Hz
Half-cycle Sinewave Single Shot
t rr t rr
1 2
: I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point) : I F / I |  ETC | rectifier |
RG4 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | RG4 | Ultra-Fast-Recovery Rectifier Diodes Sanken electric rectifier | | |
| 2 | RG4 | High Efficiency Rectifier Galaxy Semiconductor rectifier | | |
| 3 | RG4A | Ultra-Fast-Recovery Rectifier Diodes Ultra-Fast-Recovery Rectifier Diodes 600V
VRM (V) Package Part Number I F (AV) (A) 30.0 0.5 0.5 0.6 1.0 1.0 1.2 2.0 1.0 (2.0) 3.0 4.0 5.0 5.0 IFSM (A)
50Hz
Half-cycle Sinewave Single Shot
t rr t rr
1 2
: I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point) : I F / I Sanken electric rectifier | | |
| 4 | RG4A | GLASS PASSIVATED FAST SWITCHING RECTIFIER RG4A THRU RG4J
GLASS PASSIVATED FAST SWITCHING RECTIFIER
Reverse Voltage - 50 to 600 Volts Forward Current - 3.0 Amperes
FEATURES
D
Case Style G4
0.180 (4.6) 0.115 (2.9) DIA.
1.0 (25.4) MIN.
0.300 (7.6) MAX.
0.042 (1.07) 0.038 (0.962) DIA. 1.0 (25.4) MIN.
♦ High temperature metallurgically bo General Semiconductor rectifier | | |
| 5 | RG4A | Ultra-Fast-Recovery Rectifier Diodes Ultra-Fast-Recovery Rectifier Diodes 600V
VRM (V) Package Part Number I F (AV) (A) 30.0 0.5 0.5 0.6 1.0 1.0 1.2 2.0 1.0 (2.0) 3.0 4.0 5.0 5.0 IFSM (A)
50Hz
Half-cycle Sinewave Single Shot
t rr t rr
1 2
: I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point) : I F / I ETC rectifier | | |
| 6 | RG4B | GLASS PASSIVATED FAST SWITCHING RECTIFIER RG4A THRU RG4J
GLASS PASSIVATED FAST SWITCHING RECTIFIER
Reverse Voltage - 50 to 600 Volts Forward Current - 3.0 Amperes
FEATURES
D
Case Style G4
0.180 (4.6) 0.115 (2.9) DIA.
1.0 (25.4) MIN.
0.300 (7.6) MAX.
0.042 (1.07) 0.038 (0.962) DIA. 1.0 (25.4) MIN.
♦ High temperature metallurgically bo General Semiconductor rectifier | | |
| 7 | RG4C | Silicon And Fast Recovery Rectifiers RoHS
Silicon And Fast Recovery Rectifiers
TYPE
Maximum Maximum Peak Forward
Recurrent Average Surge Current
Peak Forward
Half
Reverse Rectified sine-wave
Voltage Current Superimposed
Maximum Forward Voltage
Maximum
DC
Reverse
Current TA=25 OC
Typical Reverse Recovery
Time
Package Style
T  WEJ rectifier | |
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