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Datasheet RFT7W Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | RFT7W | Non Inductive Resistors NON INDUCTIVE RESISTORS
RFT Series 水泥繞線電阻組合溫度保險絲電阻器(RFT 系列)
FEATURESFEA 特 性
gCompact type with safety design of Non-flammability g不燃與絕緣之安全設計 and insulation. gUL1412 Recognized：3W、5W、7W、10W/ 0.1Ω～1KΩ gUL1412 Recognized：3W、5W� |  Futaba Electric | data |
RFT Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | RFT10W | Non Inductive Resistors NON INDUCTIVE RESISTORS
RFT Series 水泥繞線電阻組合溫度保險絲電阻器(RFT 系列)
FEATURESFEA 特 性
gCompact type with safety design of Non-flammability g不燃與絕緣之安全設計 and insulation. gUL1412 Recognized：3W、5W、7W、10W/ 0.1Ω～1KΩ gUL1412 Recognized：3W、5W� Futaba Electric data | | |
| 2 | RFT1150 | 4 Constant Current RGBW outputs LED Driver
Raffar Technology Corp.
RFT1150
四通道大电流LED恒流驱动芯片
2010/11/16 版本: 0.3（完整版）
Confidential Information Page 1  Raffar Technology led | | |
| 3 | RFT1150 | 4 Constant Current RGBW outputs LED Driver Brief Raffar Technology Corp.
RFT1150
4 Constant Current RGBW outputs LED Driver
2010/8/03 Version: 0.1 (Brief)
Confidential Information
Page 1
www.raffar.com.tw
Description
Pin Assignment
RFT1150 is a multi-output constant current LED driver. With its linear architecture, the external circuits can Raffar Technology led | | |
| 4 | RFT1P06E | 1.4A/ 60V/ 0.285 Ohm/ ESD Rated/ P-Channel Power MOSFET RFT1P06E
Data Sheet August 1999 File Number
4495.1
1.4A, 60V, 0.285 Ohm, ESD Rated, P-Channel Power MOSFET
These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silico  Intersil Corporation mosfet | | |
| 5 | RFT2P03L | 2.1A/ 30V/ 0.150 Ohm/ P-Channel Logic Level/ Power MOSFET RFT2P03L
Data Sheet July 1999 File Number 4574.2
2.1A, 30V, 0.150 Ohm, P-Channel Logic Level, Power MOSFET
This product is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, Intersil Corporation mosfet | | |
| 6 | RFT300-CC10G1 | LOW-FADE SILICON MOSFET DOSIMETER REM Data Sheet – RFTDAT-CC10 – Rev W
Type RFT300-CC10G1 REM LOW-FADE SILICON MOSFET DOSIMETER Two RADFETs, Diode & Capacitor / Lid technology: "glob"
September 2010
A- A'
W=
silicon chip
8.75 mm
SpaceFET
Copyright REM 2005
L= A 17 mm
flying lead
6- way
connector; A' pitch 1.25
mm
1 23
 REM mosfet | | |
| 7 | RFT3055 | 2.0A/ 60V/ 0.150 Ohm/ N-Channel/ Logic Level/ ESD Rated/ Power MOSFET RFT3055LE
Data Sheet August 1999 File Number
4537.3
2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET
This product is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utiliza Intersil Corporation mosfet | |
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