RFP8N20 データシート PDFこの部品の機能は「(rfp8n18 / Rfp8n20) N-channel Enhancement Mode Power Field Effect Transistors」です。 |
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部品番号 |
RFP8N20 (RFP8N18 / RFP8N20) N-Channel Enhancement Mode Power Field Effect Transistors www.Datasheet.jp www.Datasheet.jp www.Datasheet.jp www.Datasheet.jp Harris Semiconductor |
文字列「 RFP8N20 」「 8N20 」で始まる検索結果です。 |
部品説明 |
RFP8N20L 8A/ 200V/ 0.600 Ohm/ Logic Level/ N-Channel Power MOSFET RFP8N20L Data Sheet July 1999 File Number 1514.3 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level (5V) driving sources in applications such as p Intersil Corporation |
RFP8N20L (RFP8N18L / RFP8N20L) N-CHANNEL LOGIC LEVEL POWER FIELD EFFECT TRANSISTORS
ETC |
RFP8N20L Trans MOSFET N-CH 200V 8A 3-Pin(3+Tab) TO-220AB New Jersey Semiconductor |
05D820K Varistor Varistor Specification TYEE Varistor Varistor are voltage dependent, nonlinear device which have an electrical behavior similar to back-to-back zener diodes. TYEE series zinc oxide varistor are nonlinear resistors, consisting main of zinc oxide and several kinds of metal oxide ad TYEE |
07D820K Varistor Varistor Specification TYEE Varistor Varistor are voltage dependent, nonlinear device which have an electrical behavior similar to back-to-back zener diodes. TYEE series zinc oxide varistor are nonlinear resistors, consisting main of zinc oxide and several kinds of metal oxide ad TYEE |
0805CS-820E WIRE-WOUND CHIP INDUCTOR 1. Part Description 1.1 Part Numbering (Example) ( Ex. ) 0805 C S - 120 E J T S SIZE. 0402 1.0 * 0.5 mm 0603 1.6 * 0.8 mm 0805 2.0 * 1.2 mm 1008 2.5 * 2.0 mm 1206 3.2 * 1.6 mm 1210 3.2 * 2.5 mm SHAPE. C : C SHAPE H : H SHAPE M : MOLDING PROFILE. S: STANDARD T: LOW PROFILE Q:H DELTA |
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