RFP4N06 データシート PDFこの部品の機能は「4a/ 50v And 60v/ 0.800 Ohm/ N-channel Power Mosfets」です。 |
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部品番号 |
RFP4N06 4A/ 50V and 60V/ 0.800 Ohm/ N-Channel Power MOSFETs RFP4N05, RFP4N06 June 1999 File Number 2880.2 4A, 50V and 60V, 0.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applic Intersil Corporation |
文字列「 RFP4N06 」「 4N06 」で始まる検索結果です。 |
部品説明 |
RFP4N06L 4A/ 50V and 60V/ 0.800 Ohm/ Logic Level/ N-Channel Power MOSFETs RFP4N05L, RFP4N06L Data Sheet July 1999 File Number 2876.2 4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs The RFP4N05L and RFP4N06L are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators Intersil Corporation |
138D406X0030F2 Wet Tantalum Capacitors Sintered Anode TANTALEX Capacitors Hermetically-Sealed with True Glass-to-Tantalum Seal Vishay Siliconix |
138D406X0030F2 Wet Tantalum Capacitors Sintered Anode TANTALEX?? Capacitors Hermetically-Sealed with True Glass-to-Tantalum Seal 138D Wet Tantalum Capacitors Sintered Anode TANTALEX® Capacitors Hermetically-Sealed with True Glass-to-Tantalum Seal FEATURES Improved reliability through the use of a glass-to-tantalum true hermetic anode seal is the prime feature of the Type 138D sintered anode TANTALEX® cap Vishay Siliconix |
1406 (1402 - 1410) Single Phase Bridge 200 V - 1,000 V Single Phase Bridge 12.0 A Forward Current 70 ns - 3000 ns Recovery Time 1402 - 1410 1402F - 1410F 1402UF - 1410UF ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage (Vrwm) Average Rectified Current @TC (Io) 5 VMI |
1406 Diode ( Rectifier ) American Microsemiconductor |
1406F (1402 - 1410) Single Phase Bridge 200 V - 1,000 V Single Phase Bridge 12.0 A Forward Current 70 ns - 3000 ns Recovery Time 1402 - 1410 1402F - 1410F 1402UF - 1410UF ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage (Vrwm) Average Rectified Current @TC (Io) 5 VMI |
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