RFP15N12 データシート PDFこの部品の機能は「N-channel LogIC Level Power Field - Effect Transistors」です。 |
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部品番号 |
RFP15N12 N-CHANNEL LOGIC LEVEL POWER FIELD - EFFECT TRANSISTORS New Jersey Semiconductor |
文字列「 RFP15N12 」「 15N12 」で始まる検索結果です。 |
部品説明 |
15N12 N-Channel Mosfet Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 15N12 ·FEATURES ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 120V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.15Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching Inchange Semiconductor |
15N120A IXSH15N120A Preliminary Data Sheet IXSH15N120A IGBT "S" Series - Improved SCSOA Capability IC25 = 30 A VCES = 1200 V VCE(sat) = 4.0 V Symbol V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) tsc PC TJ T JM T STG Md Weight Test Conditions TJ = 25°C to 150°C TJ = IXYS Corporation |
2SA1512 Silicon PNP Epitaxial Transistor Transistor 2SA1512 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC1788 Unit: mm 4.0±0.2 3.0±0.2 0.7±0.1 s Features q q q q Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converter Panasonic Semiconductor |
2SK1512 N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1512 DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=900 (Min) APPLICATIONS ·High voltage,high speed power switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL Inchange Semiconductor |
2SK1512-01 Power MOSFET ( Transistor ) Fuji |
2ZUD15N12E 2 Watt 7 Pin SIL Package Z 2 Watt 7 Pin SIL Package Z o Ultra-Miniature Size o Unregulated Output o 1000VDC I/O-Isolation o 2000VDC I/O-Isolation Option (add Suffix "H2") 3000VDC I/O-Isolation Option (add Suffix "H3") meets EN 60950 4000VDC I/O-Isolation Option (add Suffix "H4") meets EN 60950 MODEL mrm |
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