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Datasheet RFL1N10 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | RFL1N10 | 1A/ 80V and 100V/ 1.200 Ohm/ N-Channel/ Power MOSFETs Semiconductor
RFL1N08, RFL1N10
1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs
Description
These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers f |
 Intersil Corporation |
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| 3 | RFL1N10 | 1A 80V AND 100V 1.200 OHM N-CHANNEL POWER MOSFETS |
 New Jersey Semiconductor |
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| 2 | RFL1N10L | 1A/ 100V/ 1.200 Ohm/ Logic Level/ N-Channel Power MOSFET RFL1N10L
September 1998
1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET
Description
This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, autom |
Intersil Corporation |
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| 1 | RFL1N10L | 1A 80V AND 100V 1.200 OHM N-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
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