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Datasheet RFG40N10LE Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | RFG40N10LE | 40A/ 100V/ 0.040 Ohm/ Logic Level N-Channel Power MOSFETs RFG40N10LE, RFP40N10LE, RF1S40N10LESM
Data Sheet October 1999 File Number 4061.5
40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs
These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approa |  Intersil Corporation | mosfet |
RFG Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | RFG30P05 | 30A/ 50V/ 0.065 Ohm/ P-Channel Power MOSFETs RFG30P05, RFP30P05, RF1S30P05SM
Data Sheet July 1999 File Number
2436.4
30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs
These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silic Intersil Corporation mosfet | | |
| 2 | RFG30P06 | 30A/ 60V/ 0.065 Ohm/ P-Channel Power MOSFETs RFG30P06, RFP30P06, RF1S30P06SM
Data Sheet July 1999 File Number
2437.3
30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs
These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silic Intersil Corporation mosfet | | |
| 3 | RFG40N10 | 40A/ 100V/ 0.040 Ohm/ N-Channel Power MOSFETs RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM
Data Sheet January 2002
40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs
These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of  Fairchild Semiconductor mosfet | | |
| 4 | RFG40N10 | 40A/ 100V/ 0.040 Ohm/ N-Channel Power MOSFETs RFG40N10, RFP40N10, RF1S40N10SM
Data Sheet July 1999 File Number
2431.3
40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs
These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilizati Intersil Corporation mosfet | | |
| 5 | RFG40N10LE | 40A/ 100V/ 0.040 Ohm/ Logic Level N-Channel Power MOSFETs RFG40N10LE, RFP40N10LE, RF1S40N10LESM
Data Sheet October 1999 File Number 4061.5
40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs
These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approa Intersil Corporation mosfet | | |
| 6 | RFG45N06 | 45A/ 60V/ Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs S E M I C O N D U C T O R
RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM
45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
Packages
JEDEC STYLE TO-247
SOURCE DRAIN GATE DRAIN (BOTTOM SIDE METAL)
December 1995
Features
• 45A, 60V • rDS(ON) = 0.028Ω • Temperature Compensating P Fairchild Semiconductor mosfet | | |
| 7 | RFG45N06 | 45A/ 60V/ 0.028 Ohm/ N-Channel Power MOSFETs RFG45N06, RFP45N06, RF1S45N06SM
Data Sheet July 1999 File Number
3574.4
45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of Intersil Corporation mosfet | |
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