| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | RFD16N06SM | 16A/ 60V/ 0.047 Ohm/ N-Channel Power MOSFET Semiconductor RFD16N06, RFD16N06SM 16A, 60V, 0.047 Ohm, N-Channel Power MOSFET Description These N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as swi |
 Intersil Corporation |
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Recommended search results related to RFD16N06SM |
| Part No | Description ( Function) | Manufacturers | |
| RFD16N06 | 16A/ 60V/ 0.047 Ohm/ N-Channel Power MOSFET Semiconductor RFD16N06, RFD16N06SM 16A, 60V, 0.047 Ohm, N-Channel Power MOSFET Description These N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of s |
Intersil Corporation |
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| RFD16N06LE | 16A/ 60V/ 0.047 Ohm/ Logic Level/ N-Channel Power MOSFETs RFD16N06LE, RFD16N06LESM Data Sheet October 1999 File Number 3628.3 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuit |
Intersil Corporation |
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| RFD16N06LESM | 16A/ 60V/ 0.047 Ohm/ Logic Level/ N-Channel Power MOSFETs RFD16N06LESM Data Sheet September 2002 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization o |
 Fairchild Semiconductor |
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| RFD16N06LESM | 16A/ 60V/ 0.047 Ohm/ Logic Level/ N-Channel Power MOSFETs RFD16N06LE, RFD16N06LESM Data Sheet October 1999 File Number 3628.3 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuit |
Intersil Corporation |
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| 160622 | GaP / GaP LED Chips YELLOW-GREEN 1. 2. 2.1 2.2 Item No.: 160622 This specification applies to GaP / GaP LED Chips Structure Mesa structure Electrodes p-side (anode) n-side (cathode) Au alloy Au alloy 3. Outlines (dimensions in microns) p-Electrode p-Epitaxy GaP n-Epitaxy GaP |
 OSA Opto Light GmbH |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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