RFD10P03LSM PDF Datasheet

SEMICONDUCTOR May 1997 RFD10P03L, RFD10P03LSM, RFP10P03L 10A, 30V, 0.200Ω, Logic Level P-Channel Power MOSFET Features Description • 10A, 30V • rDS(ON) = 0.200Ω • Temperature Compensating PSPICE Model • PSPICE Thermal Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature Ordering Information These products are P-Channe

RFD10P03L, RFD10P03LSM, RFP10P03L Data Sheet July 1999 File Number 3515.2 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were desig