RFC4K データシート PDF 検索 |
| 番号 | 部品番号 | 部品説明 | メーカ | |
| 1 | RFC4K | (RFC2K - RFC4K) HIGH VOLTAGE FAST RECOVERY RECTIFIER www.Datasheet.jp CHONG PINGYANG ELECTRONICS CO.,LTD. RFC2K THRU RFC4K HIGH VOLTAGE FAST RECOVERY RECTIFIER VOLTAGE：2000-3000V CURRENT：0.2A FEATURES ·fast switching ·Low leakage ·high current capability ·high surge capability ·High reliability DO-41 1.0(25.4) MIN. .205(5.2) .166(4.2) .034(0.9) .028(0.7) DIA. DIA. MECHANICAL DATA ·Case: Molded plastic ·Epoxy: |
 CHONGQING PINGYANG ELECTRONICS |
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RF Datasheet ( データシート ) - 検索結果 |
| 部品番号 | 部品説明 | メーカ | |
| RF2307PCBA | GENERAL PURPOSE AMPLIFIER |
 RF Micro Devices |
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| RF340 | 10A/ 400V/ 0.550 Ohm/ N-Channel Power MOSFET IRF340 Data Sheet March 1999 File Number 2307.3 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is designed, tested and guaranteed to withstand a specific level of energy in the breakdown avalanche mode of |
 Intersil Corporation |
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| RFW122 | RFW122-M-PA ISM Transceiver Module RFW122-M-PA ISM Vishay RFWaves RFW122-M-PA ISM Transceiver Module with Power Amplifier 19581 DESCRIPTION The RFW122-M-PA is a small PCB module which includes the RFW122-M module, besed on Vishay RFWaves* RFW122 transceiver chipset, and a Power Amplifier mod |
 Vishay RFWaves |
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| RFL1N20 | 1A/ 180V and 200V/ 3.65 Ohm/ N-Channel Power MOSFETs Semiconductor RFL1N18, RFL1N20 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay dr |
Intersil Corporation |
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| RF2367PCBA | PCS CDMA/TDMA/GSM1800 3V PA DRIVER AMPLIFIER Preliminary RF2367 PCS CDMA/TDMA/GSM1800 3V PA DRIVER AMPLIFIER 4 Typical Applications • TDMA/CDMA/FM PCS Tx Amplifier • Low Noise Transmit Driver Amplifier • 2.4GHz WLAN Systems • GSM1800 Driver Amplifier • General Purpose Amplification • Commercial and Consumer S |
RF Micro Devices |
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| RF430F5978 | MSP430 System-in-Package With Sub-1-GHz Transceiver and 3D LF Wake-up and Transponder Interface (Rev. A) |
 Texas Instruments |
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| RFD16N05SM | 16A/ 50V/ 0.047 Ohm/ N-Channel Power MOSFETs RFD16N05, RFD16N05SM Data Sheet July 1999 File Number 2267.5 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated ci |
Intersil Corporation |
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多くを見つけるデータシート
| 部品番号 | 部品説明 | メーカ | |
| ALC887 | The ALC887 is a 7.1 Channel High Definition Audio Codec with two independent SPDIF outputs. Featuring eight channels of DAC support 7.1 sound playback, and integrates two stereo ADC that can support a stereo microphone, and feature Acoustic Echo Cancellation (AEC), Beam Forming (BF), and Noise Suppression (NS) for voice applications. |
 Realtek |
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| BK3431 | The BK3431 chip is a highly integrated Bluetooth 4.0 low energy single mode device. It integrates a high-performance RF transceiver, baseband, ARM-core Micro processor, rich feature peripheral units, programmable protocol and profile
to support BLE application. The Flash program memory makes it suitable for customized applications.
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 Beken |
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| C1318 | This is a 2SC1318, Vcbo=60V, Silicon NPN epitaxial planer type Transistor, TO-92 Package. |
 Panasonic |
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| F1B2CCI | VRRM=200V, Stack Silicon Diffused Diode, TO-220IS Package. |
 KEC |
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| 20N60C2 | 650V, Cool MOS Power Transistor, SPP20N60C2, SPB20N60C2, SPA20N60C2. |
 Infineon |
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