| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | RF2314PCBA | GENERAL PURPOSE LOW NOISE AMPLIFIER RF2314 • Broadband Gain Blocks • Final PA for Low-Power Applications • IF or RF Buffer Amplifiers • Driver Stage for Power Amplifiers • Oscillator Loop Amplifiers The RF2314 is a general purpose, low-cost, high performance amplifier designed for operation from a 2.7V to 6V supply with l |
 RF Micro Devices |
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Recommended search results related to RF2314PCBA |
| Part No | Description ( Function) | Manufacturers | |
| RF2314 | GENERAL PURPOSE LOW NOISE AMPLIFIER RF2314 • Broadband Gain Blocks • Final PA for Low-Power Applications • IF or RF Buffer Amplifiers • Driver Stage for Power Amplifiers • Oscillator Loop Amplifiers The RF2314 is a general |
RF Micro Devices |
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| 2SC2314 | 27MHz CB Transceiver Driver Applications Ordering number:EN485F NPN Epitaxial Planar Silicon Transistor 2SC2314 27MHz CB Transceiver Driver Applications Package Dimensions unit:mm 2009B [2SC2314] JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Em |
 Sanyo Semicon Device |
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| 2SC2314 | NPN EPITAXIAL PLANAR SILICON TRANSISTORS TIGER ELECTRONIC CO.,LTD NPN EPITAXIAL PLANAR SILICON TRANSISTORS Product specification 2SC2314 DESCRIPTION 27 MHz CB Transceiver Driver Applications ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC) Parameter l Value Unit Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage |
 TGS |
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| 2SC2314 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2314 DESCRIPTION ·Collector-Emitter Voltage- :VCER= 75V(Min) ;RBE=150Ω ·Collector Current- :IC=1.0A ·Low Saturation Voltage : VCE(sat)=0.6V(MAX)@ IC=0.5A ·Minimum Lot-to-Lot variations for robust device performance |
 Inchange Semiconductor |
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| 2SK2314 | Silicon N Channel MOS Type Field Effect Transistor 2SK2314 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2314 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 66 mΩ (typ.) z High forward transfer admi |
 Toshiba Semiconductor |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
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| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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