RF2105L データシート PDFこの部品の機能は「High Power Linear Uhf Amplifier」です。 |
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部品番号 |
RF2105L HIGH POWER LINEAR UHF AMPLIFIER RF Micro Devices |
文字列「 RF2105 」「 2105L 」で始まる検索結果です。 |
部品説明 |
RF2105 HIGH POWER LINEAR UHF AMPLIFIER RF Micro Devices |
RF2105LPCBA HIGH POWER LINEAR UHF AMPLIFIER RF Micro Devices |
12105C224KAT4A X7R Dielectric X7R Dielectric m o General Specifications c . U 4 t e e h S a t a D . w w w X7R formulations are called “temperature stable” ceramics and fall into EIA Class II materials. X7R is the most popular of these intermediate dielectric constant materials. Its temperature variation AVX Corporation |
21054E 16K1.8VI2CSERIALEEPROM 24AA16 16K 1.8V I2C™ Serial EEPROM FEATURES • Single supply with operation down to 1.8V • Low power CMOS technology - 1 mA active current typical - 10 µA standby current typical at 5.5V - 3 µA standby current typical at 1.8V • Organized as 8 blocks of 256 bytes (8 x 256 MicrochipTechnology |
2SD2105 Silicon NPN Triple Diffused 2SD2105 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter ID 1.5 kΩ (Typ) 130 Ω (Typ) 3 12 3 Free Datasheet http://www.nDatasheet.com 2SD2105 Absolute Maximum Ratings (Ta = 25°C) Item Collector t Hitachi |
2SD2105 Silicon NPN Darlington Power Transistor INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2105 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 5A ·High DC Current Gain : hFE= 1000(M INCHANGE |
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