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Datasheet RDX120N50 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1RDX120N5010V Drive Nch MOS FET

RDX120N50 Transistors 10V Drive Nch MOS FET RDX120N50 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 14.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity. (
ROHM Semiconductor
ROHM Semiconductor		data


RDX Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1RDX030N6010V Drive Nch MOS FET

RDX030N60 Transistors 10V Drive Nch MOS FET RDX030N60 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 14.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity. (
ROHM Semiconductor
ROHM Semiconductor		data
2RDX045N6010V Drive Nch MOS FET

RDX045N60 Transistors 10V Drive Nch MOS FET RDX045N60 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 14.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity. (
ROHM Semiconductor
ROHM Semiconductor		data
3RDX050N5010V Drive Nch MOS FET

RDX050N50 Transistors 10V Drive Nch MOS FET RDX050N50 Structure Silicon N-channel MOS FET External dimensions (Unit : mm) ÌÑóîîðÚÓ ïðòð íòî ìòë îòè Features 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static elect
ROHM Semiconductor
ROHM Semiconductor		data
4RDX060N6010V Drive Nch MOS FET

RDX060N60 Transistors 10V Drive Nch MOS FET RDX060N60 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 14.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity. (
ROHM Semiconductor
ROHM Semiconductor		data
5RDX080N5010V Drive Nch MOS FET

RDX080N50 Transistors 10V Drive Nch MOS FET RDX080N50 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 14.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity. (
ROHM Semiconductor
ROHM Semiconductor		data
6RDX100N6010V Drive Nch MOS FET

RDX100N60 Transistors 10V Drive Nch MOS FET RDX100N60 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 14.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity. (
ROHM Semiconductor
ROHM Semiconductor		data
7RDX120N5010V Drive Nch MOS FET

RDX120N50 Transistors 10V Drive Nch MOS FET RDX120N50 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 14.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity. (
ROHM Semiconductor
ROHM Semiconductor		data



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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