Datasheet RD10JS Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RD10JS	DO-34 Package Low noise/ Sharp Breakdown characteristics 400 mW Zener Diode DATA SHEET ZENER DIODES RD4.7JS to RD39JS DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode DESCRIPTION NEC Type RD [ ] JS series are DHD (Double Heatsink Diode) construction Mini Package (DO-34; Body length 2.4 mm Max.) possessing an allowable power dissipation of 400 m	NEC

RD1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RD1-125BAG1A	RJ45 1X1 w/ Transformer 10/100Base-T w/ LED APPROVAL SHEET To : Spec No. : UDE P/N RD1-125BAG1A Date : Customer P/N Description : RJ45 1¡Ñ 1 w/ Transformer 10/100Base-T w/ LED GP : GREEN PRODUCT Approved Checked Prepared Name Date UDE Rev : XA ´é¼w¹q¤lªÑ¥÷¦³- ½ U.D. Electronic Corp. 6 2 ¸¹ No.	UDE
RD15HVF1	Silicon MOSFET Power Transistor < Silicon RF Power MOS FET (Discrete) > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W DESCRIPTION RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica -tions. OUTLINE 3.2+/-0.4 DRAWING 9.1+/-0.7 1.	Mitsubishi Electric Semiconductor
RD16HHF1	Silicon MOSFET Power Transistor MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD16HHF1 OUTLINE DRAWING RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applic	Mitsubishi Electric

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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